NITRIDE SEMICONDUCTOR SUBSTRATE

Japanese Patent JP2016195241

A

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate which can reduce leakage current and improve voltage withstanding.SOLUTION: In a nitride semiconductor substrate, a nitride semiconductor layer 30 is formed on one principal surface of a single crystal substrate 10 via a first layer 20. When selecting any three places in a radial direction from a cross section formed by cleavage of an interface between the first layer 20 and the nitride semiconductor layer 30 at a diameter portion, and monitoring the three places by providing at least a width of 500 nm in a radial direction, in a thickness direction from the single crystal substrate 10 toward the nitride semiconductor layer 30, an average value of a difference d between the maximum height T1 of salient tops 21 of the first layer 20 and the minimum height T2 of recess bottoms 22 of the first layer 20 is within a range of not less than 6 nm and not more than 15 nm. And, on the three places in the cross section, an average value of a distance L between the neighboring salient top 21 and the recess bottom 22 on the three places in a radial direction is not less than 10 nm and not more than 25 nm.SELECTED DRAWING: Figure 2

OMORI NORIKO
OISHI KOJI
ABE YOSHIHISA
KOMIYAMA JUN
ERIGUCHI KENICHI

JP2016027459A

November 17, 2016

February 16, 2016

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COORSTEK KK

H01L21/205; C23C16/34; C30B29/38; H01L21/338; H01L29/778; H01L29/812

JP2013042032A	2013-02-28
JP2014222716A	2014-11-27
JP2014216474A	2014-11-17
JP2014146733A	2014-08-14
JP2016127223A	2016-07-11
JP2013012767A	2013-01-17
JP2012015304A	2012-01-19

WO2011016304A1

2011-02-10

Mayumi Yoshikawa
Hiroshi Fujiki

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