Title:
NITRIDE SEMICONDUCTOR CRYSTAL, ITS GROWING METHOD, MATERIAL AND GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JP2009046382
Kind Code:
A
Abstract:
To provide a high concentration doped nitride semiconductor crystal having superior crystallinity.
A raw material containing a sulfur atom is supplied and the nitride semiconductor crystal 202 is grown to a direction except a +c axis direction on a base substrate 201. The direction is specifically a -c axis direction, an m axis direction or a normal direction of a semipolar face. The semipolar face is a (10-1-3) face. The raw material comprises one compound selected from the group consisting of hydrogen sulfide, methyl mercaptan and dimethyl sulfide.
Inventors:
KUBO SHUICHI
FUJITO TAKESHI
KIYOMI KAZUMASA
FUJITO TAKESHI
KIYOMI KAZUMASA
Application Number:
JP2008178958A
Publication Date:
March 05, 2009
Filing Date:
July 09, 2008
Export Citation:
Assignee:
MITSUBISHI CHEM CORP
International Classes:
C30B29/38; C30B25/16; C30B33/02
Domestic Patent References:
| JP2006193348A | 2006-07-27 | |||
| JP2004273964A | 2004-09-30 |
Foreign References:
| WO2006124067A1 | 2006-11-23 |
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes