NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Title:

NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2004087587

Kind Code:

A

Abstract:

To provide a nitride semiconductor device having an electrode having high barrier height in a Schottky junction with a nitride semiconductor and high adhesion with the nitride semiconductor and a method for manufacturing the nitride semiconductor device.

The method for manufacturing the semiconductor device formed on the nitride semiconductor is provided with a process for forming the electrode 10 on the nitride semiconductor 3 and the electrode forming process is provided with a process for laminating a 1st substance containing a 1st element on the nitride semiconductor, a process for laminating a 2nd substance containing a 2nd element 7a having a work function larger than that of the 1st element on the 1st substance layer and a process for diffusing the 2nd element near a boundary between the nitride semiconductor and the 1st substance by heat treatment.

Inventors:

MIURA NARIHISA
OISHI TOSHIYUKI
FUKITA MUNEYOSHI
ABE YUJI

Application Number:

JP2002243549A

Publication Date:

March 18, 2004

Filing Date:

August 23, 2002

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L21/28; H01L21/338; H01L29/423; H01L29/47; H01L29/778; H01L29/812; H01L29/872; (IPC1-7): H01L29/47; H01L21/28; H01L21/338; H01L29/423; H01L29/778; H01L29/812; H01L29/872

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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