Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022141110
Kind Code:
A
Abstract:
To provide a nitride semiconductor device and a method for manufacturing a nitride semiconductor device capable of suppressing the formation of trap levels.SOLUTION: A nitride semiconductor device has a gallium nitride layer, a gate insulating film on the gallium nitride layer, and a gate electrode on the gate insulating film. The gate insulating film has a first insulating film in contact with the gallium nitride layer and a second insulating film located between the first insulating film and the gate electrode. The first insulating film contains at least one of aluminum and gallium and oxygen, and includes corundum-type crystallized regions.SELECTED DRAWING: Figure 3

More Like This:
JP2004241534METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP6702696Doping with a lateral gradient of the material
JP2009526911Crystalline compound pattern formation method on the surface
Inventors:
OUCHI YUKI
TSUJI HIDENORI
Application Number:
JP2021041262A
Publication Date:
September 29, 2022
Filing Date:
March 15, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/336; H01L21/265; H01L21/31; H01L21/314; H01L21/316; H01L29/12; H01L29/78
Attorney, Agent or Firm:
Hirose Hajime



 
Previous Patent: Construction method of earth retaining structure

Next Patent: Pellicle for EUV lithography