Title:
窒化物半導体素子
Document Type and Number:
Japanese Patent JP5475569
Kind Code:
B2
Abstract:
According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The first buried layer is formed on the depression and one of the protrusions. The InyAlzGa1-y-zN buried layer is formed on the first buried layer. The second buried layer is formed on the InyAlzGa1-y-zN buried layer. A portion of the first buried layer formed on the depression and a portion of the first buried layer formed on the one of the protrusions are not connected to each other. A portion of the InyAlzGa1-y-zN buried layer formed above the depression and a portion of the InyAlzGa1-y-zN buried layer formed above the one of the protrusions are connected to each other.
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Inventors:
Shu Sugahara
Application Number:
JP2010139875A
Publication Date:
April 16, 2014
Filing Date:
June 18, 2010
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/201; H01L21/20; H01L21/338; H01L29/778; H01L29/812; H01L33/32; H01S5/343
Domestic Patent References:
| JP2005019964A | ||||
| JP2007134742A | ||||
| JP2006324697A |
Attorney, Agent or Firm:
Masahiko Hinataji