Title:
窒化物半導体装置
Document Type and Number:
Japanese Patent JP7303807
Kind Code:
B2
Abstract:
Nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity above the substrate; a second nitride semiconductor layer of a second conductivity different from the first conductivity, above the first nitride semiconductor layer a first opening penetrating through the second nitride semiconductor layer; an electron transport layer and an electron supply layer disposed along inner surfaces of the first opening, in stated sequence from the substrate-side; a gate electrode above the electron supply layer, covering the first opening; a source electrode connected to the electron supply layer and the electron transport layer, at a position separated from the gate electrode; and a drain electrode on a surface of the substrate opposite to a surface on which the first nitride semiconductor layer is disposed. At least part of the second nitride semiconductor layer is fixed to a potential different from a potential of the source electrode.
Inventors:
Daisuke Shibata
Satoshi Tamura
Masahiro Ogawa
Satoshi Tamura
Masahiro Ogawa
Application Number:
JP2020531279A
Publication Date:
July 05, 2023
Filing Date:
July 11, 2019
Export Citation:
Assignee:
Panasonic Holdings Co., Ltd.
International Classes:
H01L21/338; H01L21/28; H01L21/329; H01L21/337; H01L29/41; H01L29/417; H01L29/423; H01L29/47; H01L29/778; H01L29/808; H01L29/812; H01L29/872
Domestic Patent References:
| JP2014022701A | ||||
| JP2011035072A | ||||
| JP2016054250A | ||||
| JP2014192493A | ||||
| JP2006286910A |
Foreign References:
| WO2017138505A1 | ||||
| WO2016147541A1 | ||||
| WO2015004853A1 | ||||
| WO2015122135A1 |
Attorney, Agent or Firm:
Hiromori Arai
Eisaku Teratani
Shinichi Michisaka
Eisaku Teratani
Shinichi Michisaka
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