Title:
NITRIDE SEMICONDUCTOR LASER DEVICE AND ITS FABRICATION METHOD
Document Type and Number:
Japanese Patent JP3218963
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To oscillate a nitride semiconductor as a laser by growing the nitride semiconductor including a lasing active layer on a surface A of a saphire substrate, and then cleaving the substrate along a surface R, and further forming a resonance surface for laser light on a cleaved surface of the active layer.
SOLUTION: A nitride semiconductor including a laser specification active layer 14 is grown on a surface A of a saphire substrate 10, and then the saphire substrate 10 is cleaved along a surface R of the saphire substrate 10, and further a resoance surface for laser light is formed on a cleaved surface of the active layer 14 that is obtained simultaneously with the cleavage and cleaved along a different surface from the surface R of the substrate 10. The nitride semiconductor grown on the surface R is likely to be cleaved along a predetermined surface simultaneously with the cleavage of the saphire owing to the property of orientation of the nitride semiconductor crystal once it is cleaved along the surface R. The cleaved surface of the nitride semiconductor layer cleaved along the predetermined surface is coincident with an end surface of the active layer 14 whereby there is formed a resonance surface of the end surface of the active layer 14 which is obtained by the cleavage and forms a substanbtially mirror surface.
Inventors:
Yasunori Sugimoto
Shuji Nakamura
Shuji Nakamura
Application Number:
JP1279696A
Publication Date:
October 15, 2001
Filing Date:
January 29, 1996
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01L33/06; H01L33/14; H01L33/32; H01S5/00; H01S5/10; H01S5/323; H01S5/343; (IPC1-7): H01S5/10; H01L33/00
Domestic Patent References:
| JP6464811A | ||||
| JP5343742A |
Other References:
【文献】Japanese Journal of Applied Physics Part2 Vol.35,No.2B,pp.L217-L220
Attorney, Agent or Firm:
Aoyama Ryo (2 outside people)