Title:
NITRIDE SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3502527
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the life of a laser light source using nitride semiconductor, by making the distance of medium for obtaining the gain of a laser element less than or equal to a specified value, in a nitride semiconductor laser.
SOLUTION: Medium for obtaining the gain of a laser element is an active layer 45, preferably, an active layer 45 of multiple quantum well structure which is composed of nitride semiconductor containing In. As to the structure, the active layer end surfaces constitute a resonator, and a laser chip has a 80 nm long resonator. The laser chip is mounted on a heat sink in the state of face-up wherein a GaN substrate 40 faces the heat sink. A P pad electrode 52 is wire-bonded, and laser oscillation is tried at a room temperature. In the initial state of an LED, light emission at 413 nm is obtained. As a current is increased, a continuous oscillation of 405 nm oscillation wavelength can be confirmed at a room temperature under the condition that the threshold current density is 2.0 kA/cm2 and the threshold voltage is 4.0 V. A laser element of long life which is at least 2000 hours can be obtained.
Inventors:
Shuji Nakamura
Application Number:
JP10687397A
Publication Date:
March 02, 2004
Filing Date:
April 24, 1997
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01S5/343
Domestic Patent References:
| JP7235724A | ||||
| JP1194377A | ||||
| JP8139414A | ||||
| JP7297476A | ||||
| JP8264891A | ||||
| JP513079U |