Title:
窒化物半導体基板の製造方法および窒化物半導体基板
Document Type and Number:
Japanese Patent JP7104408
Kind Code:
B2
Abstract:
To provide a method for producing a nitride semiconductor substrate having improved crystallinity, and the nitride semiconductor substrate.SOLUTION: A method for producing a nitride semiconductor substrate has: a first step in which in atmosphere containing nitrogen gas, sputtering is conducted of aluminum as a target, so that a first aluminum nitride layer is formed on the substrate; and a second step in which sputtering is conducted of aluminum nitride as a target, so that a second aluminum nitride layer is formed on the first aluminum nitride layer.SELECTED DRAWING: Figure 3
Inventors:
Yusuke Hayashi
Hideto Miyake
Hideto Miyake
Application Number:
JP2018164953A
Publication Date:
July 21, 2022
Filing Date:
September 03, 2018
Export Citation:
Assignee:
Mie University
International Classes:
C30B29/38; C23C14/06; G02F1/377; H01L21/203
Domestic Patent References:
| JP2004076105A | ||||
| JP8239752A | ||||
| JP2012188294A | ||||
| JP2017055116A |
Attorney, Agent or Firm:
Hiroi Arai