Title:
NON-CONTACT C-V MEASUREMENT METHOD
Document Type and Number:
Japanese Patent JP2023085642
Kind Code:
A
Abstract:
To propose a non-contact C-V measurement method of PTC processing conditions capable of achieving excellent resistivity measurement accuracy when measuring the resistivity of a single crystal silicon wafer using a non-contact C-V measurement device.SOLUTION: A non-contact C-V measurement method includes: an ozone processing step for irradiating a single crystal silicon wafer with UV light in a wet air atmosphere to perform ozone processing; and a measurement step for measuring capacitance while applying a high-frequency voltage to a surface of the single crystal silicon wafer in a state in which the distance from the sensor is maintained in a non-contact state of 1 μm or less. The ozone processing step includes a temperature raising step, a constant temperature holding step, and a temperature lowering step. In at least one of the constant temperature holding step and the temperature lowering step, the single crystal silicon wafer at 100°C or higher and lower than 400°C is irradiated with the UV light.SELECTED DRAWING: Figure 1
Inventors:
KUME FUMITAKA
SUGITA MUNEYUKI
ZSOLT DORKO
PETER HORVATH
SABOSHI ZOLTAN SHIRASHI
MATE RESITAK
SUGITA MUNEYUKI
ZSOLT DORKO
PETER HORVATH
SABOSHI ZOLTAN SHIRASHI
MATE RESITAK
Application Number:
JP2021199782A
Publication Date:
June 21, 2023
Filing Date:
December 09, 2021
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
SEMILAB JAPAN KK
SEMILAB JAPAN KK
International Classes:
H01L21/66; G01N27/04; G01N27/22
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka