不揮発性半導体メモリ及びその製造方法

Title:

不揮発性半導体メモリ及びその製造方法

Document Type and Number:

Japanese Patent JP4374037

Kind Code:

B2

Abstract:

A metal oxide having a sufficiently higher dielectric constant than silicon nitride, such as Ti oxide, Zr oxide, or Hf oxide is used as base material, and in order to generate a trap level capable of moving in and out electrons therein, a high-valence substance of valence of 2 or more (that is, valence VI or higher) is added by a proper amount, and to control the trap level, a proper amount of nitrogen (carbon, boron, or low-valence substance) is added, and thus a nonvolatile semiconductor memory having a charge accumulating layer is obtained.

Inventors:

Tatsuo Shimizu
Koichi Muraoka

Application Number:

JP2007084275A

Publication Date:

December 02, 2009

Filing Date:

March 28, 2007

Export Citation:

Click for automatic bibliography generation Help