To suppress the variation of a characteristic of a storage cell in a non-volatile storage device.

The non-volatile storage device is provided with at least one first wiring extending in a first direction, at least one second wiring which is arranged on an upper layer of the first wiring and extends in a second direction which is not parallel with the first direction, and the storage cell in which the first wiring and second wiring cross each other and which is arranged between the first wiring and the second wiring and has a storage element and a rectifier element connected in series to the storage element. A protection film is formed at a side of the rectifier element.