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Title:
NONLINEAR OPTICAL MATERIAL AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH03294830
Kind Code:
A
Abstract:
PURPOSE:To obtain the nonlinear optical material doped with the fine particles of a semiconductor without changing the surfaces thereof by dispersing the fine particles of the semiconductor into an amorphous thin film consisting of either of nitride or carbide having the forbidden band width larger than the forbidden band width of the semiconductor material. CONSTITUTION:A sputtering device 6 is constituted of a target 1 consisting of the semiconductor, a target 2 consisting of the nitride, a substrate 3, and a high-frequency power source 4 for supplying a high-frequency power to the respective targets. The structure constituting doping the fine particles of the semiconductor into the amorphous thin film consisting of either the nitride or carbide having the forbidden band width larger than the forbidden band width of the semiconductor is adopted in this case and, therefore, the surfaces of the semiconductor particles are not participated. The target 1 of the semiconductor material and the target 2 of the material constituting the amorphous thin film are respectively separated provided and are deposited by using a sputtering method. The thin film doped with the fine particles of the semiconductor in the amorphous thin film at the high conc. with the uniform concn. distribution is obtd. in this way.

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Inventors:
MANABE YOSHIO
TANAHASHI ICHIRO
MITSUYU TSUNEO
Application Number:
JP9797390A
Publication Date:
December 26, 1991
Filing Date:
April 13, 1990
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G02F1/355; H01S3/108; G02F1/35; (IPC1-7): G02F1/35; H01S3/108
Domestic Patent References:
JPH0365930A1991-03-20
JPH03212625A1991-09-18
JPH03120519A1991-05-22
Attorney, Agent or Firm:
Tomoyuki Takimoto



 
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