To provide a nonvolatile memory in which it can be prevented that boosting speed is varied and rewriting endurance is varied largely by dispersion of manufacturing of devices and a time required for rewriting is lengthened largely.

In a non-volatile memory provided with an internal oscillator including resistor and capacitors and a boosting circuit performing boosting operation by an oscillation signal generated by the oscillators, stress applied to a storage element is reduced and rewriting endurance is improved by constituting the device so that even if an oscillation frequency is varied and boosting speed is deviated from a design target value by the dispersion of manufacturing the device, the oscillation frequency can be trimmed so as to measure a boosting time and boost with the prescribed speed.