Nonvolatile semiconductor memory - Toshiba Corporation

Title:

Nonvolatile semiconductor memory

Document Type and Number:

Japanese Patent JP5911834

Kind Code:

B2

Abstract:

A NAND type flash memory includes a plurality of memory cells, a bit line electrically connected to a first end of the memory cells, a source line electrically connected to a second end of the memory cells, and a control unit configured to carry out one of first and second sense operations, the first sense operation being carried out when a first read command is received and the second sense operation being carried out when a second read command is received, the first read command being different from the second read command.

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Inventors:

Hiroshi Maejima
Yoshihiko Kamata

Application Number:

JP2013188840A

Publication Date:

April 27, 2016

Filing Date:

September 11, 2013

Export Citation:

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Assignee:

Toshiba Corporation

International Classes:

G11C16/02; G11C16/04; G11C16/06

Domestic Patent References:

JP2007109309A
JP7220485A
JP2009163793A
JP2013125569A
JP2013012553A
JP2012138158A
JP2013140953A

Attorney, Agent or Firm:

Kurata Masatoshi
Yoshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Takao Ako
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi

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