Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP2775551
Kind Code:
B2
Abstract:
PURPOSE: To furnish a nonvolatile semiconductor device and a manufacturing method thereof which enable reduction of non-uniformity in a threshold voltage of each memory cell and prevention of an 'overerase phenomenon' caused by the non-uniformity.
CONSTITUTION: A charge storage electrode 3 and a control electrode 6 are formed of an amorphous silicon layer or a plurality of polysilicon layers respectively. Thereby crystal structures of the charge storage electrode and the control electrode are made to be amorphous or of a small grain size. According to this constitution, an energy loss of impurity ions passing through the charge storage electrode and the control electrode is constant.
Inventors:
OOI MAKOTO
ONODA HIROSHI
ONODA HIROSHI
Application Number:
JP19207192A
Publication Date:
July 16, 1998
Filing Date:
July 20, 1992
Export Citation:
Assignee:
MITSUBISHI DENKI KK
International Classes:
G11C17/00; G11C16/02; G11C16/04; H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP473972A | ||||
| JP6433973A |
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)
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