To significantly enhance sensitivity of a nucleic acid detecting sensor using an FET (field-effect transistor).
In the nucleic acid detecting sensor for detecting a target nucleus acid molecule 109 with a special alignment included in specimen on the basis of the intensity of characteristics modulation of FET, by fixing at least a probe nucleus acid molecule 102 hybridizable with the target nucleus acid molecule to a gate 101 of the aforementioned FET, a gate width of the FET is obtained in the order of (0rkBT/e2n)1/2, where 0 is the dielectric constant of vacuum, r the relative permittivity of channel domain, kB the Boltzmann constant, T the absolute temperature of the channel domain of FET, e the elementary charge, and n the carrier density.
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto