Title:
オーミック合金接触領域シーリング層
Document Type and Number:
Japanese Patent JP7438343
Kind Code:
B2
Abstract:
Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.
Inventors:
Duvall, Paul, Jay.
Bettencourt, John, Pea.
Macrimmons, James, W.
Alcorn, Paul, Em.
ballas, philip, c.the second
Davis, Michael, Es.
Bettencourt, John, Pea.
Macrimmons, James, W.
Alcorn, Paul, Em.
ballas, philip, c.the second
Davis, Michael, Es.
Application Number:
JP2022521194A
Publication Date:
February 26, 2024
Filing Date:
August 03, 2020
Export Citation:
Assignee:
Raytheon Company
International Classes:
H01L21/338; H01L21/28; H01L29/812
Domestic Patent References:
| JP2009054831A | ||||
| JP59220966A | ||||
| JP2019036586A | ||||
| JP54087075A | ||||
| JP2018163923A |
Foreign References:
| WO2016050879A1 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Osamu Miyazaki
Tadahiko Ito
Osamu Miyazaki