PURPOSE: To manufacture a integrated element high in property with good reproducibility and at high yield rate by providing at least one semiinsulating conductor layer outside the resonator structure of the surface emitting semiconductor laser, which has vertical resonance structure.

CONSTITUTION: Semiinsulating GaAs 102 is grown on an n-type GaAs substrate 101, and surface emitting semiconductor laser structure is made on it. And it transmits light from a lower reflecting layer 103 to the semiinsulating semiconductor layer 102 a little, so carriers are induced in the semiinsulating semiconductor layer 102 by the transmitted light, and at some point of motion, it becomes as if the semiinsulating property of the semiinsulating semiconductor layer 102 has apparently disappeared. Accordingly, optical bistability effect can be achieved without deteriorating the property of the surface emitting semiconductor laser. Hereby, in element manufacturing method, since the structure is simple, a device with high performance and high property such as of large area, high integration, and two dimension materialization can be made simply and at good yield rate.