PURPOSE: To reduce the size of a system by forming an integrated circuit having a high frequency oscillator and a semiconductor laser on the same substrate to reduce a delay due to a circuit element and to reduce the delay due to wirings since an interval between elements is very short.
CONSTITUTION: A semiconductor laser, an MES-FET and a Schottky diode are formed in an optical integrated circuit device. The laser has a current blocking layer (N-type GaAs) 3 having two ridges on a P-type GaAs layer 1 having a mesa stripe. The manufacture of the device has growing a P-type GaAs layer 2 3μm or larger by an LPE method of an MOCVD method on a semi-insulating GaAs substrate. Then, it is grown by the LPE method to a cap layer 7, and the grown layer except the laser and the layer 2 is removed by dry etching and chemical etching. Si is doped by an ion implanting method on the removed substrate 1 to form active layers 10, 11. Then, a gate electrode and wiring electrode are formed to complete an optical integrated circuit device.
TANAKA TAKESHI
ITO KUNIO
| JPS60103688A | 1985-06-07 | |||
| JPS6126278A | 1986-02-05 |