PURPOSE: To provide the optical modulator which satisfies crystal matching conditions capable of embodying a high-quality surface type modulator and can be used in an important long wavelength region in optical communication and optical information processing.
CONSTITUTION: The optical modulator which satisfies the crystal matching conditions capable of embodying the high-quality surface type modulator, can be used in the long wavelength region above 0.96μm wavelength important in optical communication and optical information processing and can be integrated with other optical elements is provided by applying an electric field to a type II superlattice layer 23 consists of In(1-x-y)GaxAlyAs (where 0≤x, y≤1) and In(1-w)GawAs(1-x)Pz (0≤w, z≤1) subjected to lattice matching with InP, thereby modulating the intensity of transmitted light.
KAWAMURA YUICHI
IWAMURA HIDETOSHI
