Title:
OPTICAL SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR QUANTUM WELL STRUCTURE
Document Type and Number:
Japanese Patent JP3228453
Kind Code:
B2
Abstract:
PURPOSE: To obtain excellent film quality by thickening a third layer in which P-type or N-type impurities are not contained, as compared with a first layer similar to the third layer, in a semiconductor barrier layer.
CONSTITUTION: A semiconductor quantum well structure Q is formed by sequentially and repeatedly laminating semiconductor barrier layers B and semiconductor quantum well layers W. As to the semiconductor barrier layer B, a modulated dope type is formed by sequentially a laminating layer 1 in which R-type or N-type impurities are not contained, a layer 2 in which R-type or N-type impurities are contained, and a layer 3 in which these impurities are not contained. The layer 3 is set thicker than the layer 1. Thereby, the total thickness is reduced while the semiconductor quantum well layer W laminated on the layer 3 has a thickness enough to have excellent film quality.
Inventors:
Manabu Mitsuhara
Hideo Sugiura
Hiroyasu Mawatari
Hideo Sugiura
Hiroyasu Mawatari
Application Number:
JP30143394A
Publication Date:
November 12, 2001
Filing Date:
November 10, 1994
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01S5/00; H01S5/343; (IPC1-7): H01S5/343
Domestic Patent References:
| JP382115A | ||||
| JP4348094A |
Other References:
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．Ｖｏｌ．６５ Ｎｏ．３ ｐ．２７７−２７９（１９９４）
Attorney, Agent or Firm:
Masaharu Tanaka