Title:
OPTICAL SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, DRIVING THEREOF, AND SYSTEM USING THE SAME
Document Type and Number:
Japanese Patent JP3311238
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a layer having a smooth plane perpendicular to an optical waveguide in order to improve the reflectance of an end surface of the optical waveguide formed by etching in an optical semiconductor device of a horizontal substrate type.
SOLUTION: By a chemical beam epitaxy(CBE) method, a layer 106 having a plane substantially perpendicular to optical waveguides 103, 104 is grown in a lateral direction while end surfaces formed by etching are smoothed. Thus, an optical semiconductor device has the optical waveguides 103, 104 with end surfaces thereof formed by etching, and the layer 106 formed by lateral crystal growth on the end surfaces of the optical waveguides formed by etching.
Inventors:
Toshihiko Onai
Application Number:
JP12647196A
Publication Date:
August 05, 2002
Filing Date:
April 23, 1996
Export Citation:
Assignee:
Canon Inc
International Classes:
H04B10/40; H01S5/00; H01S5/042; H01S5/12; H04B10/2507; H04B10/272; H04B10/275; H04B10/278; H04B10/50; H04B10/532; H04B10/54; H04B10/572; H04B10/58; H04B10/60; (IPC1-7): H01S5/12; H04B10/02; H04B10/28
Domestic Patent References:
| JP7176832A |
Attorney, Agent or Firm:
Kazuo Kato
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