To allow constitution of an optical waveguide which uses an AlGaN-based nitride semiconductor and comprises clad layers having a homogeneous composition to achieve sufficient light trapping.
The optical waveguide includes: a first boron nitride layer 102 as a clad layer which is formed on a substrate 101 and comprises a hexagonal boron nitride; a first semiconductor layer 103 which is formed on and in contact with the first boron nitride layer 102 and comprises AlxGa1-xN(0.1≤x≤1); a core layer 104 which is formed on the first semiconductor layer 103 and comprises AlxGa1-xN(0≤x≤1); a second semiconductor layer 105 which is formed on the core layer 104 and comprises AlxGa1-xN(0.1≤x≤1); and a second boron nitride layer 106 as a clad layer which is formed on and in contact with the second semiconductor layer 105 and comprises a hexagonal boron nitride.
TSUZUKI TAKESHI
SHIGEKAWA NAOTERU
WATANABE NORIYUKI
KOBAYASHI YASUYUKI
JPN6014007034; Ｙａｓｕｙｕｋｉ Ｋｏｂａｙａｓｈｉ， Ｋａｚｕｈｉｄｅ Ｋｕｍａｋｕｒａ， Ｔｅｔｓｕｙａ Ａｋａｓａｋａ， ａｎｄ Ｔｏｓｈｉｋｉ Ｍａｋｉｍｏｔｏ: 'Ｌａｙｅｒｅｄ ｂｏｒｏｎ ｎｉｔｒｉｄｅ ａｓ ａ ｒｅｌｅａｓｅ ｌａｙｅｒ ｆｏｒ ｍｅｃｈａｎｉｃａｌ ｔｒａｎｓｆｅｒ ｏｆ ＧａＮ-ｂａｓｅｄ ｄｅｖｉｃｅｓ' ＮＡＴＵＲＥ Ｖｏｌ． ４８４, 20120412, ｐｐ． ２２３ - ２２７
JPN6014007036; 小林康之、赤坂哲也: 'サファイア基板上六方晶ＢＮ薄膜ＭＯＶＰＥ成長' ２００８年（平成２０年）春季第５５回応用物理学関係連合講演会予稿集 第１分冊, 20080327, ｐｐ． ３８８, 社団法人応用物理学会
JPN6014007034; Ｙａｓｕｙｕｋｉ Ｋｏｂａｙａｓｈｉ， Ｋａｚｕｈｉｄｅ Ｋｕｍａｋｕｒａ， Ｔｅｔｓｕｙａ Ａｋａｓａｋａ， ａｎｄ Ｔｏｓｈｉｋｉ Ｍａｋｉｍｏｔｏ: 'Ｌａｙｅｒｅｄ ｂｏｒｏｎ ｎｉｔｒｉｄｅ ａｓ ａ ｒｅｌｅａｓｅ ｌａｙｅｒ ｆｏｒ ｍｅｃｈａｎｉｃａｌ ｔｒａｎｓｆｅｒ ｏｆ ＧａＮ-ｂａｓｅｄ ｄｅｖｉｃｅｓ' ＮＡＴＵＲＥ Ｖｏｌ． ４８４, 20120412, ｐｐ． ２２３ - ２２７
Shigeki Yamakawa
Yuzo Koike