ORGANIC FERROELECTRIC MEMORY AND ITS MANUFACTURING METHOD

Title:

ORGANIC FERROELECTRIC MEMORY AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2006253474

Kind Code:

A

Abstract:

To provide an organic ferroelectric memory manufactured by a simple process, and to provide its manufacturing method.

The method for manufacturing an organic ferroelectric memory comprises (a) a step for forming an organic semiconductor layer 40 by depositing an organic semiconductor material in a predetermined region above a substrate 10, (b) a step for forming an organic ferroelectric layer 50 by depositing an organic ferroelectric material in a predetermined region above the organic semiconductor layer 40, and (c) a step for forming a gate electrode 60 above the organic ferroelectric layer 50.

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Inventors:

KARASAWA JUNICHI
HIRAI EIKI

Application Number:

JP2005069269A

Publication Date:

September 21, 2006

Filing Date:

March 11, 2005

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L27/105; H01L21/8246; H01L27/28; H01L29/786; H01L51/05

Attorney, Agent or Firm:

Yukio Fuse
Mitsue Obuchi
Tatsuya Ina
Takekoshi Noboru

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