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Title:
ORGANIC LIGHT EMITTING TRANSISTOR
Document Type and Number:
Japanese Patent JP2009182302
Kind Code:
A
Abstract:

To simplify the structure of an organic light emitting transistor with a plurality of gates.

The organic light emitting transistor includes: a substrate (1); a first gate electrode (2) disposed on the substrate; a second gate electrode (3) disposed on the substrate away from the first gate electrode; a gate insulating film (4) disposed on the substrate covering at least a part of the first gate electrode and the second gate electrode; a first source/drain electrode (5) disposed on the gate insulating film; a first organic semiconductor layer (6) superimposed on each of the first gate electrode and the second gate electrode and disposed on the gate insulating film covering at least a part of the first source/drain electrode; a second source/drain electrode disposed on the first organic semiconductor layer; and a second organic semiconductor layer (8) superimposed on each of the first gate electrode and the second gate electrode and disposed on the first organic semiconductor layer covering at least a part of the second source/drain electrode.


Inventors:
KAMIKAWA TAKETOMI
Application Number:
JP2008022673A
Publication Date:
August 13, 2009
Filing Date:
February 01, 2008
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L51/50; H01L21/28; H01L29/786; H01L33/00; H01L33/24; H01L33/26; H01L33/38; H01L33/44; H01L51/05
Attorney, Agent or Firm:
Yoshiyuki Inaba
Katsuro Tanaka
Shinji Oga



 
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