Title:
Organic thin film transistor insulating layer material
Document Type and Number:
Japanese Patent JP5980522
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulating layer material capable of forming an organic thin-film transistor insulating layer which has high resistance to a metal vapor used in a sputtering method.SOLUTION: The organic thin-film transistor insulating layer material contains: a polymer compound (A) including a repeating unit containing a cyclic ether structure and a repeating unit containing an organic group which generates a phenolic hydroxyl group by the action of an acid; and a fluororesin (B) having at least one group selected from a group consisting of a phenolic hydroxyl group and a cyclic ether group.
Inventors:
Koichi Yahagi
Application Number:
JP2012033072A
Publication Date:
August 31, 2016
Filing Date:
February 17, 2012
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
H01L29/786; C08F212/14; C08F214/18; C08L25/18; C08L27/12; C08L63/10; G09F9/30; H01L21/312; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2011225854A | ||||
| JP2012023361A | ||||
| JP2011523201A | ||||
| JP2007065488A | ||||
| JP2011228678A |
Attorney, Agent or Firm:
Samejima Mutsumi
Takuji Yamada
Masaishi Nishishita
Takuji Yamada
Masaishi Nishishita
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