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Title:
ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2015109455
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an organic thin film transistor which has high response speed (driving speed) and a large ON/OFF ratio and which can be driven at low voltage; and provide an organic thin film light emitting transistor using the organic thin film transistor.SOLUTION: An organic thin film transistor in which at least three terminals of a gate electrode, a source electrode, and a drain electrode, and an insulator layer and an organic semiconductor layer are provided on a substrate and the source-drain current is controlled by application of voltage to the gate electrode comprises a charge injection layer between the organic semiconductor layer and the source layer, and a charge injection layer between the organic semiconductor layer and the drain electrode, in which each charge injection layer contains a compound represented as the following formula (1). In the formula (1), Aris a substituent represented as the following formula (2), Arrepresents a 6-60C bivalent aromatic hydrocarbon which may have a substituent or a 2-60C bivalent aromatic heterocyclic group which may have a substituent, Aris a substituent represented as the following formula (3), and n is an integer of 1 to 20.

Inventors:
NAKAMURA HIROAKI
KURIHARA NAOKI
KONDO HIROSHI
SAITO MASATOSHI
NAKANO HIRONORI
Application Number:
JP2014264865A
Publication Date:
June 11, 2015
Filing Date:
December 26, 2014
Export Citation:
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Assignee:
IDEMITSU KOSAN CO
International Classes:
H01L29/786; C07C15/54; C07C15/58; C07C15/60; C07C15/62; C07C22/08; H01L21/28; H01L51/05; H01L51/30
Domestic Patent References:
JPH10125924A1998-05-15
JP2005327797A2005-11-24
JP2006332613A2006-12-07
JP2009182252A2009-08-13
JP2005135600A2005-05-26
JP2000150168A2000-05-30
JP2006253675A2006-09-21
JP2009206108A2009-09-10
Foreign References:
WO2008044695A12008-04-17
WO2007145293A12007-12-21
Attorney, Agent or Firm:
Kihei Watanabe
Yuko Tanaka
Takeshi Sato
Koji Hirayama