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Title:
有機トランジスタ、回路素子及びそれらの製造方法
Document Type and Number:
Japanese Patent JP5532762
Kind Code:
B2
Abstract:

To provide an organic transistor and a circuit element, which operate at low voltage, and at the same time, have high withstanding voltage even when a large base voltage is applied, and are easily applicable to various kinds of circuit elements without an increase in the manufacturing cost.

The organic transistor and the circuit element have a vertical transistor portion having a collector electrode 1, an emitter electrode 2, an organic semiconductor layer 3 provided between the both electrodes, and a base electrode 4 provided in the organic semiconductor layer 3, and a resistor portion 6 provided between the base electrode 4 and a base voltage power source terminal 7. The resistor portion 6 includes a first electrode 21 connected to the base voltage power source terminal 7 and composed of the same material as that of the collector electrode 1, a second electrode 22 connected to the base electrode 4 and composed of the same material as that of the emitter electrode 2, and a resistor layer 24 sandwiched between the first electrode 21 and the second electrode 22 and composed of the same material as that of the organic semiconductor layer 3.

COPYRIGHT: (C)2011,JPO&INPIT


Inventors:
Shinya Fujimoto
Hiromi Maeda
Application Number:
JP2009202575A
Publication Date:
June 25, 2014
Filing Date:
September 02, 2009
Export Citation:
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Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
H01L29/73; H01L21/331; H01L21/337; H01L21/338; H01L21/8222; H01L21/8232; H01L27/06; H01L29/808; H01L29/812; H01L51/05
Domestic Patent References:
JP1209767A
JP59189665A
JP2004282039A
JP2009076891A
Attorney, Agent or Firm:
Shunichi Yoshimura