Title:
ORGANOCOPPER COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM PREPARED BY USING THE SAME
Document Type and Number:
Japanese Patent JP2003252823
Kind Code:
A
Abstract:
To obtain an organocopper compound for metal organic chemical vapor deposition, which is readily vaporizable, stably supplied as a raw material in film forming, with which a film-forming speed is improved, a metal organic chemical vapor deposition apparatus is hardly corroded, treatment of exhaust gas in a MOCVD process is not complicated and adhesivity to a substrate film is excellent.
The organometallic compound for metal organic chemical vapor deposition is represented by general formula (1) or formula (2) (R1 is a methyl group and R2 is an isobutyl group, R1 is a methyl group and R2 is an isopropyl group or R1 is an isobutyl group and R2 is a t-butyl group).
Inventors:
SAI ATSUSHI
OGI KATSUMI
OGI KATSUMI
Application Number:
JP2002053412A
Publication Date:
September 10, 2003
Filing Date:
February 28, 2002
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C07C49/92; C07F1/08; C23C16/18; H01L21/28; H01L21/285; (IPC1-7): C07C49/92; C07F1/08; C23C16/18; H01L21/285
Attorney, Agent or Firm:
Masayoshi Suda
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