Title:
化学相堆積に有用な有機金属化合物
Document Type and Number:
Japanese Patent JP6853814
Kind Code:
B2
Abstract:
A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R1R2R3 (Si))—Co(CO)4 (Formula 1), wherein R1, R2 and R3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.
More Like This:
WO/2005/020317 | RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION |
JP2017028076 | GROUP III NITRIDE LIGHT EMITTING ELEMENT MANUFACTURING METHOD |
WO/2021/211485 | DEPOSITION OF METAL FILMS |
Inventors:
Odedra Ragesh
Don Kung Hai
Chambera Sean
Don Kung Hai
Chambera Sean
Application Number:
JP2018507756A
Publication Date:
March 31, 2021
Filing Date:
April 25, 2016
Export Citation:
Assignee:
Seastar Chemicals Unlimited Liability Company
International Classes:
C23C16/18; C07F19/00; C23C16/34; C23C16/40
Foreign References:
WO2014118748A1 |
Attorney, Agent or Firm:
Satoshi Asakawa
Masaki Shimura
Masaki Shimura