ORGANOVANADIUM COMPOUND, SOLUTION RAW MATERIAL CONTROLLING THE COMPOUND AND METHOD FOR FORMING VANADIUM-CONTAINING THIN FILM

Title:

ORGANOVANADIUM COMPOUND, SOLUTION RAW MATERIAL CONTROLLING THE COMPOUND AND METHOD FOR FORMING VANADIUM-CONTAINING THIN FILM

Document Type and Number:

Japanese Patent JP2005023009

Kind Code:

A

Abstract:

To obtain an organovanadium compound having excellent evaporation stability and high film forming rate, a solution raw material containing the compound and to provide a method for forming a vanadium-containing thin film having excellent covering properties.

The organovanadium compound is represented by formula (1) (R1 and R2 are each a 1-4C straight-chain or branched alkyl group; R1 and R2 may be mutually the same or different). The organovanadium compound is represented by formula (2) (R3 is a 1-4C straight-chain or branched alkyl group).

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Inventors:

SAI ATSUSHI

Application Number:

JP2003189285A

Publication Date:

January 27, 2005

Filing Date:

July 01, 2003

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP

International Classes:

C07F17/00; C23C16/18; H01L21/285; H01L21/318; (IPC1-7): C07F17/00; C23C16/18; H01L21/285; H01L21/318

Attorney, Agent or Firm:

Masayoshi Suda

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