PURPOSE: To obtain in high yield and high reproducibility the titled compound useful as a raw material for MO-CVD method for production technique of semiconductor thin film, etc., by blending a dialkylzinc with a dimethyl sulfide in such a way that a low-boiling component is generally in an excess amount, followed by a reaction, and aging.
CONSTITUTION: A dialkylzinc [e.g, (CH3)2Zn, etc.] is blended with a dialkyl sulfide [e.g., (C2H5)2S, etc.] in such a way that a low-boiling component of the two is generally in an excess amount, in an equivalent ratio of the low- boiling component to a high-boiling component of preferably 1.1W1.2. Then, they are reacted at 10W35°C for 1W2hr, the temperature of the reaction mixture is raised at 10W15°C/hr, and it is aged under a preferable condition at 30W70°C for 30minW1hr. Then, the excess component is distilled away, to give the aimed compound [e.g., (CH3)2Zn-S(C2H5)2), etc.].
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ITO NAOYUKI
SHIMOBAYASHI TAKASHI
MIZUMOTO TERUYUKI
FUJISAWA MASAO
ICHIKAWA AKIHIRO
