Title:
OSCILLATION CIRCUIT AND NONVOLATILE SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP3703516
Kind Code:
B2
Abstract:
PURPOSE: To secure a sufficient oscillation frequency in the low voltage area of a ring oscillation circuit, to suppress the rise of the oscillation frequency in a high voltage area and to reduce current consumption in a MOS semiconductor integrated circuit device.
CONSTITUTION: A first constant voltage generation circuit 2a constituted of a P-MOS enhancement transistor 21 and an N-MOS depression transistor 22 and a second constant voltage generation circuit 2b constituted of the N-MOS depression transistor 23 and an N-MOS enhancement transistor 24 are provided. A first constant voltage generated in the first constant voltage generation circuit is applied to the gate electrode of the P-MOS transistor of a transmission gate 26 connected between respective inverter circuits 25 for constituting the ring oscillation circuit and a second constant voltage generated in the second constant voltage generation circuit is applied to the gate electrode of the N-MOS transistor of the transmission gate 26. By such a ring oscillation circuit, an electronic device composed of a small-sized EEPROM having a long service life is realized.
Inventors:
Miyagi Masaki
Yoshikazu Kojima
Yoshikazu Kojima
Application Number:
JP5117395A
Publication Date:
October 05, 2005
Filing Date:
March 10, 1995
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
H03K3/354; G11C14/00; G11C16/06; H03B5/26; H03K3/011; H03K3/03; H03K5/13; H03K5/00; (IPC1-7): H03K3/354; G11C16/06; H03K3/03
Domestic Patent References:
| JP54125954A | ||||
| JP420016A | ||||
| JP52119152A | ||||
| JP3252216A | ||||
| JP63189010A | ||||
| JP5526747A | ||||
| JP60211695A |
Attorney, Agent or Firm:
Yoshiharu Matsushita