Title:
単一坩堝とかかる坩堝を利用した流出(エフュージョン)源
Document Type and Number:
Japanese Patent JP4713612
Kind Code:
B2
Abstract:
A unibody, monolithic, one-piece negative draft crucible for an MBE effusion source. The crucible maximizes capacity, uniformity and long term flux stability, and minimizes oval defects, depletion effects, and short term shutter-related flux transients. The invention also includes an effusion source employing such a crucible, as well as a method and mandrel apparatus for making a unibody containment structure, such as a crucible formed of PBN, having a negative draft, via chemical vapor deposition.
Inventors:
Paul Y Colombo
Robert F Donadio
Robert F Donadio
Application Number:
JP2008125091A
Publication Date:
June 29, 2011
Filing Date:
May 12, 2008
Export Citation:
Assignee:
BCO Compound Semiconductor Inc.
International Classes:
C23C14/24; C30B23/08; C04B35/583; C23C16/01; C23C16/34; C30B23/06; F27B14/10; F27D1/16; H01L21/203
Domestic Patent References:
| JP1153595A | ||||
| JP4274316A | ||||
| JP8167575A | ||||
| JP61058889A | ||||
| JP62093368A |
Attorney, Agent or Firm:
Eio Furuya
Tadashi Matsushita
Tsurumoto Yoshifumi
Tadashi Matsushita
Tsurumoto Yoshifumi