Overheating detecting device

Japanese Patent JP6028666

B2

PROBLEM TO BE SOLVED: To provide an excessive temperature rise detection device capable of suppressing the deterioration of the detecting accuracy of the excessive temperature rise detection of a semiconductor element.SOLUTION: An excessive temperature rise detection device is configured to detect the excessive temperature rise of a semiconductor element 10 disposed next to a drive circuit 20. The excessive temperature rise detection device includes: a first thermo-sensitive element 11 disposed in the semiconductor element 10 for outputting a first temperature signal via a wire 30 to the drive circuit 20; a second thermo-sensitive element 21 disposed in the drive circuit 20 for outputting a second temperature signal; a first comparator 24 for, when the first temperature signal reaches a reference voltage V1, outputting an excessive temperature rise sensing signal; a second comparator 25 for, when the second temperature signal reaches a reference voltage V2, outputting the excessive temperature rise sensing signal; a third comparator 26a for determining the superimposition of a noise on the wire 30; and a determination circuit 28 for, when the absence of the superimposition of a noise is determined, determining the excessive temperature rise of the semiconductor element 10 from the output of the first comparator 24, and for, when the presence of the superimposition of a noise is determined, determining the excessive temperature rise of the semiconductor element 10 from the output of the second comparator 25.

Kenji Matsuda

JP2013084348A

November 16, 2016

April 12, 2013

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株式会社デンソー

H01L23/34; H01L21/822; H01L27/04

JP2008171940A
JP2006019700A
JP2002124618A

Kazuyuki Yahagi
Taihei Nonobe
Takanori Kubo

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