Title:
OXIDE FILM ETHCING METHOD FOR A SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS51150977
Kind Code:
A
Abstract:
PURPOSE:To get a etching methode which has no need to turn the substrate of the evaporation equipment, and to change the electrode wiring direction, and which has no auxious of cuting the electrode wire at the edge of the etching line stairs.
Inventors:
YOKOTA SHIROU
KATOU TADAO
KATOU TADAO
Application Number:
JP7489975A
Publication Date:
December 24, 1976
Filing Date:
June 19, 1975
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/306; H01L21/302; (IPC1-7): H01L21/302
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