Title:
OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR AND SPUTTERING TARGET, AND THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2012164963
Kind Code:
A
Abstract:
To provide an oxide for thin film transistor which can achieve high mobility while exhibiting excellent stress tolerance (an amount of threshold voltage shift before and after stress application is small).
The oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn, and In, and following formulas (1)-(3) are satisfied where [Zn], [Sn], and [In] are the contents (atomic %) of the metallic elements contained in the oxide. [In]/([In]+[Zn]+[Sn])≥-0.53×[Zn]/([Zn]+[Sn])+0.36...(1), [In]/([In]+[Zn]+[Sn])≥2.28×[Zn]/([Zn]+[Sn])-2.01...(2), and [In]/([In]+[Zn]+[Sn])≤1.1×[Zn]/([Zn]+[Sn])-0.32...(3).
Inventors:
MIKI AYA
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
MORITA SHINYA
KUGIMIYA TOSHIHIRO
YASUNO SATOSHI
Application Number:
JP2011258273A
Publication Date:
August 30, 2012
Filing Date:
November 25, 2011
Export Citation:
Assignee:
KOBE STEEL LTD
International Classes:
H01L29/786; C23C14/08; C23C14/34; H01L21/336
Domestic Patent References:
| JP2008243928A | 2008-10-09 | |||
| JP2010030824A | 2010-02-12 | |||
| JP2008277326A | 2008-11-13 |
Foreign References:
| WO2010023889A1 | 2010-03-04 |
Attorney, Agent or Firm:
Kyuichi Ueki
Hisahiko Ueki
Tadashi Sugakawa
Hiroaki Ito
Akemi Takeoka
Hisahiko Ueki
Tadashi Sugakawa
Hiroaki Ito
Akemi Takeoka
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