Title:
OXIDE THIN FILM DEVICE
Document Type and Number:
Japanese Patent JPH03262174
Kind Code:
A
Abstract:
PURPOSE:To enable a ferroelectric thin film to be oriented in a direction of (111) on a silicon or a compound semiconductor single crystal substrate by a method wherein a specific metal thin film is formed as a buffer layer between the single crystal substrate plane and an oxide thin film of specific perovskite structure. CONSTITUTION:A silicon or a compound semiconductor single crystal whose plane orientation is (111) is used as a substrate 1, and the substrate 1 is formed of silicon doped with B, Al, N, P, or the like or non-doped silicon or chemical compound semiconductor such as GaAs, GaP, InP, or the like. In succession, a Al thin film 2 is formed on the single crystal substrate 1 as oriented in the direction of (111). Then, a thin film 3 of noble metal such as Ag, Au, Pt, Pd, or the like is formed thereon as oriented in a direction of (111). ¦Furthermore, an oxide thin film 4, which is possessed of a perovskite structure and represented by a general formula, ABO3 (A denotes one or more elements selected from Pb, Ba, Sr, Mg and a rare earth element group, B is either of Ti and Zr or both of them), is formed thereon as oriented in a direction of (111). By this setup, an oxide thin film device where an oxide thin film oriented in the direction of (111) is formed on the (111) plane of a semiconductor single crystal can be realized.
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Inventors:
SAKASHITA YUKIO
Application Number:
JP5991590A
Publication Date:
November 21, 1991
Filing Date:
March 13, 1990
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
H01L21/8247; H01L21/8246; H01L27/105; H01L29/788; H01L29/792; H01L37/00; (IPC1-7): H01L29/788; H01L29/792; H01L37/00
Attorney, Agent or Firm:
Hiroshi Namikawa