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Title:
P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT
Document Type and Number:
Japanese Patent JP2004356114
Kind Code:
A
Abstract:

To obtain a performance of equivalence or more in the same size as and at the same cost as an n-channel power MIS field effect transistor.

In the p-channel power MIS field effect transistor formed on a silicon surface having a substantially (110) plane, a withstand voltage between a gate and a source is set to 10V or more, and a silicon surface is flattened or a gate insulating film containing Kr, Ar or Xe is used.


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Inventors:
OMI TADAHIRO
TERAMOTO AKINOBU
AKAHORI HIROSHI
FUTAI KEIICHI
WATANABE TAKAKUNI
Application Number:
JP2003148275A
Publication Date:
December 16, 2004
Filing Date:
May 26, 2003
Export Citation:
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Assignee:
OMI TADAHIRO
YAZAKI CORP
International Classes:
H01L21/316; H01L21/28; H01L21/318; H01L29/04; H01L29/51; H01L29/78; (IPC1-7): H01L29/78; H01L21/316; H01L21/318
Domestic Patent References:
JP2003115587A2003-04-18
JPH0910713A1997-01-14
JPH1157636A1999-03-02
JPH11307497A1999-11-05
JP2000150792A2000-05-30
Attorney, Agent or Firm:
Masaki Yamakawa



 
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