Title:
POLISHING SOLUTION AND POLISHING METHOD OF InP WAFER
Document Type and Number:
Japanese Patent JP2004207417
Kind Code:
A
Abstract:
To provide polishing solution for primary polishing of an InP wafer wherein scratches are not made on the front surface without using bromine, and polishing speed is high.
The polishing solution contains only colloidal silica wherein the grain diameter D is 10-300nm and the maximum value of height of surface protrusion is at least 5nm and chlorination isocyanuric acid, but does not contain sodium sulfate and potassium chloride. Percentage to deionized water of the colloidal silica solution is 5-20%. When colloidal silica weight is set to 1, the weight ratio of the chlorination isocyanuric acid is 0.5-1.5. The pH of the colloidal silica is 7-14 and, in particular, 8-11 is desirable.
Inventors:
FUJIWARA SHINYA
Application Number:
JP2002373466A
Publication Date:
July 22, 2004
Filing Date:
December 25, 2002
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
B24B37/00; C09K3/14; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; C09K3/14
Attorney, Agent or Firm:
Shigeki Kawase
Previous Patent: SEMICONDUCTOR DEVICE, ELECTRONIC EQUIPMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Next Patent: FEEDTHROUGH CAPACITOR DEVICE
Next Patent: FEEDTHROUGH CAPACITOR DEVICE