Title:
【発明の名称】薄膜EL素子発光層の製造方法
Document Type and Number:
Japanese Patent JP2640136
Kind Code:
B2
Abstract:
PURPOSE:To obtain a high-quality thin film EL element luminous layer by irradiating a thin film formed on a substrate with an electron beam, monitoring emitted cathode luminescence, and controlling a luminescence center, the concentration of activator, and the amounts of evaporation from respective evaporation sources. CONSTITUTION:In a vacuum tank 1, for example, Zn, S, and Mn are put into evaporation sources 3, 4, and 5, respectively, and respective evaporation sources 3, 4, 5 are heated independently. On the other hand, a substrate 2 ts heated to 200 deg.C and shutters 6, 7, 8 are opened. At this time, an electron beam is emitted from an electron gun 10 and the substrate 2 is irradiated with this electron beam, and fluorescence is emitted from a ZnS.Mn film formed on the substrate 2. Further, the above fluorescence is spectroscoped by means of a spectroscope 11 and detected by means of an SMA 12, and respective temps. of the evaporation sources 3, 4, 5 are changed by means of the spectrum. By this method, the temps. of respective evaporation sources can be controlled so that the optimum spectrum is reached, and the high-quality EL element luminous layer can be obtained with superior reproducibility.
Inventors:
MATSUNO AKIRA
TANDA SATOSHI
NIRE TAKASHI
TANDA SATOSHI
NIRE TAKASHI
Application Number:
JP2766889A
Publication Date:
August 13, 1997
Filing Date:
February 08, 1989
Export Citation:
Assignee:
KOMATSU SEISAKUSHO KK
International Classes:
C23C14/24; C23C14/54; H05B33/10; C23C14/06; (IPC1-7): C23C14/24; C23C14/06; H05B33/10
Domestic Patent References:
| JP63259067A | ||||
| JP6483657A | ||||
| JP63190238A | ||||
| JP220932B2 |
Attorney, Agent or Firm:
Hamamoto Tadashi