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Title:
【発明の名称】絶縁膜の改質方法
Document Type and Number:
Japanese Patent JPH0817174
Kind Code:
B2
Abstract:
A method for reforming insulating film such as a BSG film formed by CVD technique. The method makes it an object to reduce the parasitic capacitance between conductor layers between which an insulating film, especially a BSG film, intervenes and includes the steps of depositing a BSG film 14 on a substrate 1 using a depositing gas and exposing the BSG film 14 to a reforming gas.

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Inventors:
Kazuo Maeda
Tokumasu Tokumasu
Yuyama Yoshiaki
Application Number:
JP28115893A
Publication Date:
February 21, 1996
Filing Date:
November 10, 1993
Export Citation:
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Assignee:
Canon Sales Co., Ltd.
Architech Co., Ltd.
Semiconductor Process Laboratory Co., Ltd.
International Classes:
H01L21/31; C23C16/40; C23D13/00; H01L21/316; H01L21/768; (IPC1-7): H01L21/316; H01L21/31
Attorney, Agent or Firm:
Keizo Okamoto



 
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