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Title:
CHROMIUM NITRIDE SPUTTERING TARGET
Document Type and Number:
Japanese Patent JPH083737
Kind Code:
A
Abstract:

PURPOSE: To obtain a sputtering target capable of easily giving a chromium nitride film uniform in nitrogen concn. and free from defects with high productivity.

CONSTITUTION: Chromium powder having ≤100 mesh particle size is put in a furnace filled with inert gas by substitution, the inside of the furnace is kept under 0.01-0.04kg/cm2 gauge pressure while feeding gaseous nitrogen or a gaseous mixture of gaseous nitrogen with inert gas and the powder is fired at 800-1,000°C. The resultant chromium nitride powder is compacted and sintered to obtain the objective chromium nitride sputtering target having 1-10wt.% N content and ≥6.5g/cm3 density.


Inventors:
MINOYA KATSUO
SATO YUICHI
TAKAHARA TOSHIYA
Application Number:
JP13704194A
Publication Date:
January 09, 1996
Filing Date:
June 20, 1994
Export Citation:
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Assignee:
TOSOH CORP
International Classes:
B22F3/10; C23C14/34; G03F1/54; G03F1/68; (IPC1-7): C23C14/34; B22F3/10; G03F1/08
Domestic Patent References:
JPH05297570A1993-11-12
JPS61170743A1986-08-01
JPS62112771A1987-05-23
JPH04505316A1992-09-17



 
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