Title:
反射防止膜形成用組成物を用いたパターン形成方法
Document Type and Number:
Japanese Patent JP4491283
Kind Code:
B2
Abstract:
The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.
Inventors:
Motoaki Iwabuchi
Yoshitaka Hamada
Tsutomu Ogiwara
Ken Asano
Takashi Ueda
Dark Pfeiffer
Yoshitaka Hamada
Tsutomu Ogiwara
Ken Asano
Takashi Ueda
Dark Pfeiffer
Application Number:
JP2004172222A
Publication Date:
June 30, 2010
Filing Date:
June 10, 2004
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/11; C08G77/14; G03C1/492; G03F7/09; G03F7/42; H01L21/027
Domestic Patent References:
| JP2004341479A | ||||
| JP2004310019A | ||||
| JP2005018054A | ||||
| JP2004014841A | ||||
| JP2001053068A |
Foreign References:
| US20030198877 | ||||
| US6420088 |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura