Title:
PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS647525
Kind Code:
A
Abstract:
PURPOSE: To enable finer image inversed pattern to be formed by using focussed ion beam exposure.
CONSTITUTION: The focussed ion beam exposure is used for pattern exposure. In other words, an Si substrate 12 is coated with, e.g., novolak base positive type resist 11 to be baked. Subsequently Be ion beams focussed by a focussing ion beam device are used for the pattern exposure of the novolak base positive type resist. Furthermore, the resist is collectively inverse-exposed to far ultraviolet rays 14 by an ultraviolet ray exposure device. Finally, when the patterns are developed in a mixed solution of potassium hydroxide saturated water soluble developer: water, fine image inversed patterns can be formed.
Inventors:
KOJIMA YOSHIKATSU
Application Number:
JP16375787A
Publication Date:
January 11, 1989
Filing Date:
June 29, 1987
Export Citation:
Assignee:
NEC CORP
International Classes:
G03F7/20; H01L21/027; H01L21/30; (IPC1-7): G03F7/20; H01L21/30
Attorney, Agent or Firm:
Uchihara Shin