To provide a pattern processing method and a pattern processing apparatus capable of directly processing a membrane with a high degree of accuracy by irradiating a light pervious to a mask between a light source and a substrate to the membrane on the surface of the substrate and at the same time, capable of precisely masking and processing a large-sized substrate with a required minimum sized-mask.
When such a pattern portion as a repeated shape is processed to the membrane, an absolute value of relative velocity against a radiation light irradiating position of the mask 20 is made smaller than the absolute value of relative velocity against the radiation light irradiating position of the substrate 11, and the substrate 11 is relatively transferred in a state that the radiation light from the light source 30 is irradiated within limited scope of the mask 20, and since the membrane processing is performed repeatedly reflecting a part of patterns of the mask 20, and patterns can positively be processed by reflecting on the membrane even if the mask pattern corresponding to the pattern portion such as repeated shapes is only a small minority, downsizing of the whole mask can be designed by drastically eliminating the mask patterns.
IJUIN MASAHITO
NAKAYAMA YASUHIKO
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