Title:
PATTERN TRANSFER METHOD
Document Type and Number:
Japanese Patent JP3760927
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern transfer method by which resolution on a wafer is enhanced using a halftone phase shifting mask adaptable to excimer laser exposure, satisfying optical constants as a phase shifting mask, controlling reflectance to exposure light and transmittance at an inspection wavelength and having high pattern forming accuracy with respect to a pattern transfer method including exposure using a halftone phase shifting mask.
SOLUTION: The above halftone phase shifting mask is obtained by disposing a transparent film and a translucent film in order on a light-transmissive substrate and patterning the transparent film and translucent film to form a transparent region comprising only the light-transmissive substrate and a translucent region having the patterned transparent film and translucent film on the light- transmissive substrate. Each of the transparent film and translucent film comprises a zirconium compound film and has 5-15% transmittance to exposure light, reflectance of ≤25% at an exposure wavelength and transmissivity of ≤30% at an inspection wavelength.
Inventors:
Takashi Haraguchi
Tadashi Matsuo
Kinji Okubo
Tadashi Matsuo
Kinji Okubo
Application Number:
JP2003131242A
Publication Date:
March 29, 2006
Filing Date:
June 25, 1997
Export Citation:
Assignee:
Toppan Printing Co., Ltd.
International Classes:
G03F1/32; G03F1/58; G03F1/68; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
| JP3478067B2 | ||||
| JP7168343A | ||||
| JP7261370A | ||||
| JP5113656A | ||||
| JP7043887A | ||||
| JP7209849A | ||||
| JP6342205A |