Title:
PATTERNING METHOD OF GAAS THERMAL OXIDE FILM
Document Type and Number:
Japanese Patent JPS5633836
Kind Code:
A
Abstract:
PURPOSE:To prevent the residual of a thin deforming layer at the part where chemical treatment is made for the thermal oxide film by etching with special etchants after an AZ-resist exfoliation process which follows normal etching wherein ultrasonic cleaning is performed after the above process. CONSTITUTION:Patterning for a GaAs thermal oxide film is performed by the following processes: (1) thermal oxide film coating, (2) AZ-resist patterning, (3) HF(1)+NH4F(1) etching, (4) washing by water, (5) H2O2 etching, (6) washing by water, (7) AZ-resist exfoliation H2SO4(1)+H2O2(1)+H2O(125) etching is successively done and ultrasonic cleaning is followed. In this way, a thin deforming layer will not be left at the part where chemical treatment is done for the thermal oxide film and clean GaAs will be obtained.
Inventors:
NANBU KAZUO
HIYAMIZU SUKEHISA
HIYAMIZU SUKEHISA
Application Number:
JP10988479A
Publication Date:
April 04, 1981
Filing Date:
August 29, 1979
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/308; H01L21/304; (IPC1-7): H01L21/306