To enhance shape control of a T-type gate electrode against variation in resist film thickness or light exposure (electron beam irradiation amount) incident to exposure of a multilayer film in fine T-type gate process employing multilayer resist, and to prevent impairment in the high frequency characteristics of a high frequency device.
A fine resist aperture pattern is formed of single layer EB resist on a semiconductor substrate, a first metal thin film is formed on the entire surface, and second resist is applied to form an aperture pattern at the umbrella part of a T-type gate. Plating of a second metal film is performed at the aperture of the umbrella part using the first metal thin film as a plating electrode, resist is removed, the first metal thin film of an underlying layer is removed using the second metal at the umbrella part as a mask, and then the first resist is removed to form a T-type gate.
| JPH0745634A | 1995-02-14 | |||
| JPH06302617A | 1994-10-28 | |||
| JPH10261659A | 1998-09-29 |
Tomoyasu Sakaguchi
Hiroki Naito